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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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M.Hanke, D.Grigoriev, M.Schmidbauer, P.Sch?fer, R.K?hler, U.W.Pohl, R.L.Sellin, D.Bimberg, N.D.Zakharov, P.Werner Diffuse X-Ray Scattering of InGaAs/GaAs Quantum Dots Physica E 21, 2-4 (2004), 684-688
We report on structural investigations on multi-fold stacks of InGaAs quantum dots (QDs) embedded within a GaAs matrix. The structures have been grown by means of metalorganic chemical vapor deposition. Cross-sectional transmission electron micrographs prove a pronounced vertical QD correlation, while plan-view images do not show any lateral ordering. Grazing incidence diffraction within various crystallographic zones clearly reveal a QD shape with a four-fold symmetry. Comparing dynamical scattering simulations, which base on finite element calculations for the strain field show that the shape of the QDs can be described by a prism with a flat top on a thin wetting layer. The mean lateral dot distance evaluated from diffuse X-ray scattering agrees well with the QD density estimated from TEM plan-view images. Keywords: InGaAs/GaAs, quantum dots, diffuse x-ray scattering
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